Electromigration lifetimes and void growth at low cumulative failure probability
نویسندگان
چکیده
منابع مشابه
Electromigration lifetimes and void growth at low cumulative failure probability
We studied electromigration (EM) lifetimes and void growth at low cumulative failure probability. We carried out EM test in damascene Cu lines using sudden-death type test structures. Its cumulative failure probability ranges from 0.005 to 90%. To investigate the void growth behaviour, Cu microstructures was investigated. EM lifetime shows correlation with the void nucleation site and the void ...
متن کاملModeling Electromigration Lifetimes of Copper Interconnects
A model for early failure due to electromigration in copper dualdamascene interconnects is proposed. The model is based on analytical expressions obtained from solutions of electromigration stress build-up assuming slit void growth under the interconnect vias. It is demonstrated that the model satisfactorily describes the complex physics of void nucleation and growth of the electromigration dam...
متن کاملElectromigration enhanced intermetallic growth and void formation in Pb-free solder joints
A kinetic analysis was formulated for electromigration enhanced intermetallic evolution of a Cu–Sn diffusion couple in the Sn-based Pb-free solder joints with Cu under bump metallurgy. The simulated diffusion couple comprised the two terminal phases, Cu and Sn, as well as the two intermetallic phases, Cu3Sn and Cu6Sn5, formed between them. The diffusion and electromigration parameters were obta...
متن کاملTomography of integrated circuit interconnect with an electromigration void
An integrated circuit interconnect was subject to accelerated-life test conditions to induce an electromigration void. The silicon substrate was removed, leaving only the interconnect test structure encased in silica. We imaged the sample with 1750 eV photons using the 2-ID-B scanning transmission x-ray microscope at the Advanced Photon Source, a third-generation synchrotron facility. Fourteen ...
متن کاملObservation of Void Formation Induced by Electromigration in Metallic Films *’ **
für Naturforschung in cooperation with the Max Planck Society for the Advancement of Science under a Creative Commons Attribution 4.0 International License. Dieses Werk wurde im Jahr 2013 vom Verlag Zeitschrift für Naturforschung in Zusammenarbeit mit der Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. digitalisiert und unter folgender Lizenz veröffentlicht: Creative Commons Namen...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Microelectronics Reliability
سال: 2006
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2006.08.001